Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Gate-Source Breakdown Voltage
: +/- 15 V
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Packaging
: Rail
Resistance Drain-Source RDS (on)
: 0.008 Ohms
Continuous Drain Current
: 108 A
Features: · TrenchMOS™ technology
· Q101 compliant
· 175 °C rated
· Logic level compatibleApplication· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoidsPinout
Specifications
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) |
|
- |
55 |
V |
|
VDGR |
drain-gate voltage (DC) |
RGS = 20 k |
- |
55 |
V |
|
VGS |
gate-source voltage (DC) |
|
- |
±15 |
V |
|
ID |
drain current (DC) |
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3 |
- |
108 |
A |
|
- |
75 |
A |
| Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
A |
|
IDM |
drain current (peak value) |
Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
433 |
A |
|
Ptot |
total power dissipation |
Tmb = 25 °C; Figure 1 |
- |
211 |
W |
|
Tstg |
storage temperature |
|
-55 |
+175 |
°C |
|
Tj |
junction temperature |
|
-55 |
+175 |
°C |
|
Source-drain diode |
|
IDR |
reverse drain current (DC) |
Tmb = 25 °C |
- |
108 |
A |
|
- |
75 |
A |
|
IDRM |
pulsed reverse drain current |
Tmb = 25 °C; tp 10 s |
- |
433 |
A |
|
Avalanche ruggedness |
|
EDS(AL)S |
non-repetitive drain-source
clamping energy |
unclamped inductive load; ID = 75 A;
VDS 55 V; VGS = 5 V; RGS = 50 k;
starting Tj = 25 °C |
- |
400 |
J |
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.DescriptionN-channel enhancement mode field-effect power transistor BUK9509-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9509-55A in SOT78 (TO-220AB)
BUK9609-55A in SOT404 (D2-PAK).
BUK9509-55A Data Sheet
