BUK9509-75A

MOSFET RAIL PWR-MOS

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BUK9509-75A Picture
SeekIC No. : 00161032 Detail

BUK9509-75A: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
BUK9509-75A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Logic level compatible.
.



Application

· Automotive and general purpose power switching:
   · 12 V, 24 V and 42 V loads
   · Motors, lamps and solenoids.



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS

drain-source voltage (DC)

-
75
V
VDGR
drain-gate voltage (DC) RGS = 20 k
-
75
V
VGS
gate-source voltage (DC)  
-
±10
V
VGSM
non-repetitive gate-source voltage tp 50 s
-
±15
V
ID
drain current (DC) Tmb = 25; VGS = 5 V;
Figure 2 and 3
-
75
A
Tmb = 100; VGS = 5 V; Figure 2
-
65
A
IDM
peak drain current Tmb = 25; pulsed; tp 10 s;
Figure 3
-
440
A
Ptot
total power dissipation Tmb = 25; Figure 1
-
230
W
Tstg
Storage temperature  
-55
+175
Tj
operating junction temperature  
-55
+175
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25
-
75
A
IDRM
peak reverse drain current Tmb = 25; pulsed; tp 10 s
-
440
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy unclamped inductive load; ID =75 A;
VDS75V; VGS = 5 V; RGS = 50;
starting Tmb= 25
-
562
mJ




Description

N-channel enhancement mode field-effect power transistor BUK9509-75A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:
BUK9509-75A in SOT78 (TO-220AB)
BUK9609-75A in SOT404 (D 2-PAK).




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