BUK9511-55A

MOSFET RAIL PWR-MOS

product image

BUK9511-55A Picture
SeekIC No. : 00162251 Detail

BUK9511-55A: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
BUK9511-55A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Logic level compatible.



Application

· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.



Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±10 V
VGSM non-repetitive gate-source voltage tp 50 s   ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V;

Figure 2 and 3
- 75
61
A
A
Tmb = 100 ; VGS = 5 V; Figure 2 266 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 166 W
Ptot total power dissipation Tmb = 25 ; Figure 1 -55 +175
Tstg storage temperature
Tj junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb = 25

-
75
A
IDRM peak reverse drain current Tmb = 25 ; pulsed; tp 10 s - 260 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy unclamped inductive load; ID =75 A;
VDS 55 V; VGS = 5 V; RGS = 50 ;
starting Tmb = 25
- 330 mJ



Description

N-channel enhancement mode field-effect power transistor BUK9511-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK).




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - External/Internal (Off-Board)
Inductors, Coils, Chokes
Cables, Wires
Semiconductor Modules
Optical Inspection Equipment
View more