Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Gate-Source Breakdown Voltage
: +/- 10 V
Continuous Drain Current
: 75 A
Packaging
: Rail
Resistance Drain-Source RDS (on)
: 0.01 Ohms
Features: ` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Logic level compatible.Application· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.Specifications
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
|
- |
55 |
V |
| VDGR |
drain-gate voltage (DC) |
RGS = 20 k |
- |
55 |
V |
| VGS |
gate-source voltage (DC) |
|
- |
±10 |
V |
| VGSM |
non-repetitive gate-source voltage |
tp 50 s |
|
±15 |
V |
| ID |
drain current (DC) |
Tmb = 25 ; VGS = 5 V;
Figure 2 and 3 |
- |
75
61 |
A
A |
| Tmb = 100 ; VGS = 5 V; Figure 2 |
266 |
A |
| IDM |
peak drain current |
Tmb = 25 ; pulsed; tp 10 s; Figure 3 |
- |
166 |
W |
| Ptot |
total power dissipation |
Tmb = 25 ; Figure 1 |
-55 |
+175 |
|
| Tstg |
storage temperature |
|
| Tj |
junction temperature |
|
-55 |
+175 |
|
| Source-drain diode |
| IDR |
reverse drain current (DC) |
Tmb = 25
|
- |
75 |
A |
| IDRM |
peak reverse drain current |
Tmb = 25 ; pulsed; tp 10 s |
- |
260 |
A |
| Avalanche ruggedness |
| WDSS |
non-repetitive avalanche energy |
unclamped inductive load; ID =75 A;
VDS 55 V; VGS = 5 V; RGS = 50 ;
starting Tmb = 25 |
- |
330 |
mJ |
DescriptionN-channel enhancement mode field-effect power transistor BUK9511-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK).
BUK9511-55A Data Sheet
