BUK95180-100A

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 11 A
Configuration : Single Dual Drain
Packaging : Rail
Gate-Source Breakdown Voltage : 15 V
Resistance Drain-Source RDS (on) : 0.173 Ohms


Application

·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	Drain-source voltage	-	-	100	V
VDGR	Drain-gate voltage	RGS = 20 k	-	100	V
±VGS	Gate-source voltage	-	-	15	V
ID	Drain current (DC)	Tmb = 25	-	11	A
ID	Drain current (DC)	Tmb = 100	-	7.7	A
IDM	Drain current (pulse peak value)	Tmb = 25	-	44	A
Ptot	Total power dissipation	Tmb = 25	-	54	W
TstgTj	Storage & operating temperature	-	-55	175

Description

N-channel enhancement mode logiclevel field-effect power transistor BUK95180-100A in aplastic envelope available inTO220AB and SOT404 . Using'trench' technology which featuresvery low on-state resistance. It isintended for use in automotive andgeneral purpose switchingapplications.