BUK9520-100A

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 63 A
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 10 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.019 Ohms


Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Logic level compatible.


Application

· Automotive and general purpose power switching:
· 12 V, 24 V and 42 V loads
· Motors, lamps and solenoids.


Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	100	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	100	V
VGS	gate-source voltage (DC)		-	±10	V
VGSM	non-repetitive gate-source voltage	tp 50 s	-	±15	V
ID	drain current (DC)	Tmb = 25 ; VGS = 5V; Figure 2 and 3	-	63	A
		Tmb = 100 ; VGS = 5 V; Figure 2	-	45	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	253	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	200	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IDR	reverse drain current (DC)	Tmb= 25	-	63	A
IDRM	pulsed reverse drain current	Tmb= 25 ; pulsed; tp 10 s	-	253	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID =63A; VDS 100V; VGS = 5 V; RGS = 50 ; starting Tmb= 25	-	420	mJ

Description

N-channel enhancement mode field-effect power transistor BUK9520-100A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D ²-PAK).