BUK954R2-55B

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0037 Ohms
Packaging : Rail
Continuous Drain Current : 191 A


Features:

Very low on-state resistance
Q101 compliant
175 °C rated
Logic level compatible.


Application

Automotive systems
12 V and 24 V loads
Motors, lamps and solenoids
General purpose power switching.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	55	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	55	V
VGS	gate-source voltage (DC)		-	±15	V
ID	drain current (DC)	Tmb= 25 °C; VGS = 5 V; Figure 2 and 3	[1]-	191	A
			[2] -	75	A
		Tmb= 100 °C; VGS = 5 V; Figure 2	[2] -	75	A
IDM	peak drain current	Tmb= 25 °C; pulsed; tp 10 ms; Figure 3	-	765	A
Ptot	total power dissipation	Tmb= 25 °C; Figure 1	-	300	W
Tstg	storage temperature		-55	+175	°C
Tj	junction temperature		-55	+175	°C
Source-drain diode
IDR	reverse drain current (DC)	Tmb = 25 °C	[1] -	191	A
			[2] -	75	A
IDRM	peak reverse drain current	Tmb = 25 °C; pulsed; tp 10 ms	-	765	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tmb= 25 °C	-	1.2	J

[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package


Description

N-channel enhancement mode field-effect power transistor BUK954R2-55B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:
    BUK954R2-55B in SOT78 (TO-220AB)
    BUK964R2-55B in SOT404 (D2-PAK).