BUK9609-55A

Features: `TrenchMOS™ technology`Q101 compliant`175 rated`Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads·Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) ...

product image

BUK9609-55A Picture
SeekIC No. : 004304462 Detail

BUK9609-55A: Features: `TrenchMOS™ technology`Q101 compliant`175 rated`Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads·Motors, lamps and solenoids.S...

floor Price/Ceiling Price

Part Number:
BUK9609-55A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/19

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Logic level compatible.



Application

· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.



Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5V;[1]
Figure 2 and 3[2]
-
-
108
75

A
A
Tmb = 100 ; VGS = 5 V; Figure 2[1] - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 433 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 211 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25 [1]
[2]



-

-


108
75

 

A
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 433 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =75A;
VDS 55V; VGS = 5 V;
RGS = 50 ; starting Tj= 25
- 400 mJ
 



Description

N-channel enhancement mode field-effect power transistor BUK9609-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK).




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Programmers, Development Systems
Soldering, Desoldering, Rework Products
Transformers
Sensors, Transducers
View more