MFG:SOT404/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: SOT404/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive...
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 55 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb= 25 °C; VGS = 5 V; Figure 2 and 3 | [1]- | 191 | A |
| [2] - | 75 | A | |||
| Tmb= 100 °C; VGS = 5 V; Figure 2 | [2] - | 75 | A | ||
| IDM | peak drain current | Tmb= 25 °C; pulsed; tp 10 ms; Figure 3 | - | 765 | A |
| Ptot | total power dissipation | Tmb= 25 °C; Figure 1 | - | 300 | W |
| Tstg | storage temperature | -55 | +175 | °C | |
| Tj | junction temperature | -55 | +175 | °C | |
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb = 25 °C | [1] - | 191 | A |
| [2] - | 75 | A | |||
| IDRM | peak reverse drain current | Tmb = 25 °C; pulsed; tp 10 ms | - | 765 | A |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy | unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tmb= 25 °C | - | 1.2 | J |
BUK964R2-55B
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