MFG:SOT404/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: SOT404/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featur...
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 100 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 100 | V |
| VGS | gate-source voltage (DC) | - | ±10 | V | |
| VGSM | non-repetitive gate-source voltage | tp 50 s | - | ±15 | V |
| ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 | - | 26 | A |
| Tmb = 100 °C; VGS = 5 V; Figure 2 | - | 19 | A | ||
| IDM | peak drain current | Tmb = 25 °C; pulsed; tp 10 s ; Figure 3 | - | 106 | A |
| Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | 106 | W |
| Tstg | storage temperature | -55 | +175 | °C | |
| Tj | operating junction temperature | -55 | +175 | °C | |
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb = 25 °C | - | 26 | A |
| IDRM | pulsed reverse drain current | Tmb = 25 °C; pulsed; tp 10 s | - | 106 | A |
| Avalanche ruggedness | |||||
| WDSS | non-repetitive avalanche energy | unclamped inductive load; ID = 20 A; VDS 100 V; VGS = 5 V; RGS = 50 ; starting Tmb = 25 °C |
- | 30 | mJ |
BUK9660-100A
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