MFG:NXP Semiconductors Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: NXP Semiconductors
Descriptions: MOSFET N-CH 100V 26A D2PAK
4800
.51090
2452.32
| Technical/Catalog Information | BUK9660-100A,118 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1924pF @ 25V |
| Power - Max | 106W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT404; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUK9660 100A,118 BUK9660100A,118 |
BUK 456-800A
PDF/DataSheet Download
N-channel enhancement mode field-effect power transistor BUK9660-100A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.Product availability: BUK9560-100A in SOT78 (TO-220AB) BUK9660-100A in SOT404 (D 2-PAK).
N-channel enhancement mode field-effect power transistor BUK96-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
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