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BUK9675-100A

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR Drain-gate voltage RGS = 20 k - 100 V ±VGS Gate-source voltage - - 15 V ID Drain current (DC) Tmb = 25 °C - 23 A ID Drain current (DC) Tm...

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BUK9675-100A: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR Drain-gate voltage RGS = 20 k - 100 V ±VGS Gate-source vol...

BUK9675-100A Data Sheet

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Part Number:
BUK9675-100A
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 100 V
VDGR Drain-gate voltage RGS = 20 k - 100 V
±VGS Gate-source voltage - - 15 V
ID Drain current (DC) Tmb = 25 °C - 23 A
ID Drain current (DC) Tmb = 100 °C - 16 A
IDM Drain current (pulse peak value) Tmb = 25 °C - 91 A
Ptot Total power dissipation Tmb = 25 °C - 98 W
Tstg, Tj Storage & operating temperature - - 55 175 °C



Description

N-channel enhancement mode logic level field-effect power transistor BUK9675-100A in a plastic envelope available in TO220AB and SOT404 . Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.


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