BUK9E06-55B,127, US $ .76-.79 , NXP Semiconductors, BUK9E06-55B,127 DataSheet download, circuit diagram from SeekIC.com

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BUK9E06-55B,127: MOSFET HIGH PERF TRENCHMOS

BUK9E06-55B,127 Data Sheet

US $ .76~.79 / Piece | Get Latest Price

Part Number:: BUK9E06-55B,127
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	15 V	Continuous Drain Current :	146 A
Resistance Drain-Source RDS (on) :	0.0054 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0054 Ohms
Gate-Source Breakdown Voltage : 15 V
Continuous Drain Current : 146 A

Parameters:

Technical/Catalog Information	BUK9E06-55B,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	5.4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	7565pF @ 25V
Power - Max	258W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 5V
Package / Case	I²Pak, TO-220AB (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT226; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUK9E06 55B,127 BUK9E0655B,127

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BUK9E06-55B,127

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