Position: Home  > All Categories> Integrated Circuits (ICs) > BUK9Y19-55B

BUK9Y19-55B

Features: ` Very low on-state resistance ` Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source v...

product image

BUK9Y19-55B Picture
See larger image
SeekIC No. : 004304503 Detail

BUK9Y19-55B: Features: ` Very low on-state resistance ` Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose powe...

BUK9Y19-55B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BUK9Y19-55B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Very low on-state resistance
` Q101 compliant
`175 rated
` Logic level compatible.


Application

· Automotive systems
·12 V and 24 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5V;
Figure 2 and 3
-
 40

A
Tmb = 100 ; VGS = 5 V; Figure 2 - 28 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 160 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 75 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25





-


40
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 160 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =40A;
VDS 55V; VGS = 5 V;
RGS = 50 ; starting Tmb= 25 		- 91 mJ
EDS(AL)R repetitive drain-source avalanche
energy		   - [1] -
[1] Maximum value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 .
Repetitive avalanche rating limited by Tj(avg) of 170 .
Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information.



Description

N-channel enhancement mode field-effect power transistor BUK9Y19-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Filters
PICO2205A
PICO2204A
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Tapes, Adhesives
803
AC452-2
Tools
TCP202
G084SN05 V.3
View more