BUK9Y19-55B,115, US $ .38-.56 , NXP Semiconductors, BUK9Y19-55B,115 DataSheet download, circuit diagram from SeekIC.com

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BUK9Y19-55B,115: MOSFET TRENCH 31V-99V G3

BUK9Y19-55B,115 Data Sheet

US $ .38~.56 / Piece | Get Latest Price

Part Number:: BUK9Y19-55B,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 15 V	Continuous Drain Current :	46 A
Resistance Drain-Source RDS (on) :	0.0173 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 46 A
Configuration : Single Triple Source
Package / Case : SOT-669
Resistance Drain-Source RDS (on) : 0.0173 Ohms

Parameters:

Technical/Catalog Information	BUK9Y19-55B,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	46A
Rds On (Max) @ Id, Vgs	17.3 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1992pF @ 25V
Power - Max	85W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	LFPak-4
FET Feature	Logic Level Gate
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUK9Y19 55B,115 BUK9Y1955B,115

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BUK9Y19-55B,115

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