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Part Number: BUK9Y30-75B
Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Perfo...


Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Perfo...
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 75 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 75 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 5V; Figure 2 and 3 |
- |
30 |
A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 21 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 120 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 75 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | operating junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb= 25 |
- |
|
A |
| IDRM | peak reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 120 | A |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive avalanche energy | unclamped inductive load; ID =30A; VDS 75V; VGS = 5 V; RGS = 50 ; starting Tmb= 25 |
- | 89 | mJ |
| EDS(AL)R | repetitive drain-source avalanche energy |
- | [1] | - | |
[1] Max value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 .
Repetitive avalanche rating limited by Tj(avg) of 170 .
Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information.
BUK9Y30-75B
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