MOSFET TRENCH 31V-99V G3
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
| Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 34 A | ||
| Resistance Drain-Source RDS (on) : | 0.028 Ohms | Configuration : | Single Triple Source | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-669 | Packaging : | Reel |
| Technical/Catalog Information | BUK9Y30-75B,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 2070pF @ 25V |
| Power - Max | 85W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 19nC @ 5V |
| Package / Case | LFPak-4 |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT669; ; 4 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUK9Y30 75B,115 BUK9Y3075B,115 |