BUL118

Features:

*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS MINIMUMLOT-TO-LOTSPREADFOR
*RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED


Application

*ELECTRONICBALLASTS FOR FLUORESCENTLIGHTING

Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-EmitterVoltage(VBE=0)	700	V
VCEO	Collector-EmitterVoltage (IB =0)	400	V
VEBO	Emitter-BaseVoltage (IC=0,IB<1.5A,tP<10Us,Tj<150 )	BVEBO	V
IC	CollectorCurrent	3	A
ICM	CollectorPeakCurrent(tP<5ms)	6	A
IB	BaseCurrent	1.5	A
IBM	BasePeakCurrent(tP<5ms)	3	A
Ptot	Total Dissipationat TO=25	60	W
Tstg	Storage Temperature	-65 to 150

Description

BUL118 is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BUL118 uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

BUL118 is designed for use in lighting applications and low cost switch-mode power supplies.