MFG:ST Package Cooled:TO-220 D/C:04+
MFG: ST
Package Cooled: TO-220
D/C: 04+
Description: The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching s...
The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanceswitching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
|
Symbol |
Parameter
|
Value
|
Unit |
|
VCES |
Collector-Emitter Voltage (VBE = 0) |
800 |
V |
|
VCEO |
emitter-base voltage(IB = 0) |
400 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
9 |
V |
|
IC |
Collector Current |
5 |
A |
|
ICM |
Collector Peak Current (tP < 5 ms) |
10 |
A |
|
IB |
Base Current |
2 |
A |
|
IBM |
Base Peak Current (tP < 5 ms) |
4 |
A |
|
Ptot |
Total Dissipation at TC = 25 °C |
33 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
· SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED
· FULLY CHARACTERIZED AT 125oC
· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
· FLYBACKAND FORWARD SINGLE TRANSISTOR LOWPOWER CONVERTERS
BUL138FP
PDF/DataSheet Download
The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.The BUL series BUL138is design...
TRANSISTOR NPN FAST HV TO-220
BUL128FP is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.BUL128FP uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide...
BUL128D-B is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.BUL128D-B uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wi...
BUL128 is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.BUL128 uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBS...
Price: 1-1 USD
IGBT Module, 400A, 12V
Price: 0.315-1.26 USD
single transient voltage suppressor, SOT23-6, 60 W, Low Current Leakage
Price: 10-15 USD
RELAY REED SPDT 250MA 5V - 2211-05-301
Price: 0.9-0.95 USD
quadruple operational amplifier, SOP, LinCMOS
Price: 2.3-2.5 USD
12-bit, sampling analog-to-digital converter, –0.3V to 6V, 0.54mW, 3μA, SOIC-8, serial interface
Price: 3.1-3.5 USD
12-bit, digital-to-analog converter, 8-SOIC, 7μs Settling Time, RoHS Compliant
Price: 10-150 USD
IGBT module, 1200V, 25A, 110W, PC board mount, Converter diode bridge, Low VCE, Compact package
Price: 13.5-14.3 USD
IC CYCLONE II FPGA 33K 672-FBGA - EP2C35F672C8N
Price: 0.32-0.48 USD
NPN, Silicon Germanium RF Transistor, 4V, 0.03A, 4-Pin(3+Tab) SOT-343
Price: 11-13 USD
module, 3 Phase, 600V, 20A, PS21255-EP, Mitsubishi Electric Semiconductor
Price: 0.16-3.18 USD
IC BUFF/DVR TRI-ST 16BIT 48TSSOP - SN74AUCH16244DGGR
Price: 50-60 USD
GTR module, 1200V, 200A, 1300W, MG200Q2YS40, Toshiba
