BUL138FP

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Maximum DC Collector Current : 5 A
Emitter- Base Voltage VEBO : 9 V
Package / Case : TO-220FP


Features:

· SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED
· FULLY CHARACTERIZED AT 125^oC

Application

· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
· FLYBACKAND FORWARD SINGLE TRANSISTOR LOWPOWER CONVERTERS

Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE = 0)	800	V
VCEO	emitter-base voltage(IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP < 5 ms)	10	A
IB	Base Current	2	A
IBM	Base Peak Current (tP < 5 ms)	4	A
Ptot	Total Dissipation at TC = 25 °C	33	W
Tstg	Storage Temperature	-65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanceswitching speeds.

The BUL series BUL138FP is designed for use in lighting applications and low cost switch-mode power supplies.