Purchase BUL44D2, In-stock BUL44D2 From SeekIC.
- Table of contents:
BUL44D2
-
Suppliers
DataSheet
General Description
BUL44D2 Maximum Ratings
| Rating | Symbol | Value | Unit |
| Collector-Emitter Sustaining Voltag | VCEO | 400 | Vdc |
| Collector-Emitter Breakdown Voltag | VCBO | 700 | Vdc |
| Collector-Emitter Breakdown Voltag | VCES | 700 | Vdc |
| Emitter-Base Voltag | VEBO |
12 |
Vdc |
|
Collector Current- Continuous - peak(1) |
IC ICM |
2 5 |
Adc |
|
Base Current- Continuous - peak(1) |
IB IBM |
1 2
|
Adc |
| Total Device Dissipation@TC= 25 Derate above 25 |
PD |
50 0.4 |
Watts W/ |
| Operating and Storage Temperature | Tj, Tstg | -65 to 150 |
BUL44D2 Features
The BUL44D2 is state-of-a High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Main features:
*Low Base Drive Requirement
*High Peak DC Current Gain (55 Typical) @ IC = 100 mA
*Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
*Integrated Collector¤CEmitter Free Wheeling Diod
*Fully Characterized and Guaranteed Dynamic VCE(sat)
*"6 Sigma" Process Providing Tight and Reproductible Parameter Sprea It's characteristics make it also suitable for PFC application.
Main features:
*Low Base Drive Requirement
*High Peak DC Current Gain (55 Typical) @ IC = 100 mA
*Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
*Integrated Collector¤CEmitter Free Wheeling Diod
*Fully Characterized and Guaranteed Dynamic VCE(sat)
*"6 Sigma" Process Providing Tight and Reproductible Parameter Sprea It's characteristics make it also suitable for PFC application.
BUL44D2
PDF/DataSheet Download
- Datasheet: BUL44D2
- File Size: 516480 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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