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BUL45

Transistors Bipolar (BJT) 5A 400V 75W NPN

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SeekIC No. : 00213440 Detail

BUL45: Transistors Bipolar (BJT) 5A 400V 75W NPN

BUL45 Data Sheet

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Part Number:
BUL45
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Frequency : 12 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 5 A
Emitter- Base Voltage VEBO : 9 V
DC Collector/Base Gain hfe Min : 14
Maximum Operating Frequency : 12 MHz


Features:

*Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include:
*Improved Efficiency Due to:
-Low Base Drive Requirements (High and Flat DC Current Gain hFE)

-" Low Power Losses (On¤CState and Switching Operations)
-" Fast Switching:tfi= 100 ns (typ) and tsi = 3.2us (typ)
@ IC= 2.0 A, IB1= IB2= 0.4 A
*Full Characterization at 125
*Tight Parametric Distributions Consistent Lot¤Cto¤CL
*BUL45F, Case 221D, is UL Recognized at 3500 V : File #E69369
RMS




Specifications

Rating Symbol BUL45 BUL45F Unit
Collector-Emitter Sustaining Voltag

VCEO

 400 Vdc
Collector-Emitter Breakdown Voltag VCES 700 Vdc
Emitter-Base Voltag VEBO 9.0 Vdc
Collector Current-Continuous
- Peak(1)		 IC
ICM

5.0

10

 Adc
Base Current IB 20 Adc

RMS Isolated Voltage(2)Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%,T = 25)
Test No.1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c

 VISOL

-

-

-

4500

3500

1500

 Volts
Total Device Dissipation
Derate above 25
(TC=25)		 PD

75

0.6

35

0.28

 Watts
W/
Operating and Storage Temperature Tj , Tstg -65 to 150





Parameters:

Technical/Catalog InformationBUL45
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)5A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic250mV @ 200mA, 1A
Frequency - Transition12MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUL45
BUL45
BUL45OS ND
BUL45OSND
BUL45OS



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