BUL45D2

Transistors Bipolar (BJT) 5A 400V 75W NPN

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SeekIC No. : 00213590 Detail

BUL45D2: Transistors Bipolar (BJT) 5A 400V 75W NPN

floor Price/Ceiling Price

Part Number:
BUL45D2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 22 Configuration : Single
Maximum Operating Frequency : 13 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 5 A
Emitter- Base Voltage VEBO : 12 V
Maximum Operating Frequency : 13 MHz
DC Collector/Base Gain hfe Min : 22


Features:

The BUL45D2 is state-of-a High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE  window.
Main features:
*Low Base Drive Requirement
*High Peak DC Current Gain (55 Typical) @ I = 100 mA
*Extremely Low Storage Time Min/Max Guarantees Due to the
*H2BIP Structure which Minimizes the Spread
*Integrated Collector¤CEmitter Free Wheeling Diod
*Fully Characterized and Guaranteed Dynamic VCE(sat)
*"6 Sigma"Process Providing Tight and Reproductible Parameter Sprea It'fls characteristics make it also suitable for PFC application



Specifications

 Rating  Symbol  Value  Unit
 Collector-Emitter Sustaining Voltag  VCEO  400  Vdc
 Collector-Base Breakdown Voltag  VCBO  700  Vdc
 Collector-Emitter
Basekdown Voltag
 VCES  700  Vdc
 Emitter-Base Voltag  VEBO  12  Vdc
 Collector Current
-Continuous
-Peak(1)
 

IC
ICM

  5
 10

 Adc
 Base Current
-Continuous
-Peak(1)
 

IB
IBM

  2
  4
 Adc
 "Total Device Dissipation
Derate above 25
TC=25
 PD   75
  0.6
 Watt
 W/
 Operating and Storage Temperature  Tj , Tstg  -65 to 150  



Parameters:

Technical/Catalog InformationBUL45D2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)5A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce22 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 80mA, 800mA
Frequency - Transition13MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUL45D2
BUL45D2
BUL45D2OS ND
BUL45D2OSND
BUL45D2OS



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