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BUL55B

Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy masking for tight control of characteristics from batch to batch.Triple Guard Rings for improved contr...

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SeekIC No. : 004304534 Detail

BUL55B: Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy ma...

BUL55B Data Sheet

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Part Number:
BUL55B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.


Specifications

VCBO Collector-Base Voltage(IE=0) 500V
VCEO Collector-Emitter Voltage(IB=0) 250V
VEBO Emitter-Base Voltage(IC=0) 10V
IC Continuous Collector Current 8A
IC(PK) Peak Collector Current 12A
IB Base Current 3A
Ptot Total Dissipation at Tcase=25 55W
Tstg Operating and Storage Temperature Range -55 to +150



Description

The BUL55B features are as follows:
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING


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