BUL58D

Configuration :
Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 5


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*LOWBASE-DRIVEREQUIREMENTS VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERISEDAT125
*HIGHRUGGEDNESS
*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE


Application

*ELECTRONICTRANSFORMERSFOR
  HALOGENLAMPS
*ELECTRONICBALLASTSFOR
  FLUORESCENTLIGHTING
*SWITCHMODEPOWERSUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	800	V
VCEO	Collector-Emitter Voltage (IB= 0)	450	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	8	A
ICM	Collector Peak Current (tP<5 ms)	16	A
IB	Base Current	4	A
IBM	Base Peak Current (tP<5 ms)	8	A
Ptot	Total Dissipation at Tc = 25	85	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA.

The BUL series BUL58D is designed for use in lighting applications and low costs witch-modepower supplies.