BUL59

DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Package / Case : TO-220-3


Features:

*NPN TRANSISTOR
*HIGH VOLTAGE CAPABILITY
*MINIMUM LOT-TO-LOT SPREAD FOR
  RELIABLE OPERATION 
*VERY HIGH SWITCHING SPEED 
  HIGH RUGGEDNESS


Application

*ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS
*SWITCH MODE POWER SUPPLIES  


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	850	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	8	A
ICM	Collector Peak Current (tP<5 ms)	16	A
IB	Base Current	4	A
IBM	Base Peak Current (tP<5 ms)	8	A
Ptot	Total Dissipation at Tc = 25	90	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL59 is manufactured using high voltage Multi Epitaxial Mesa technology to enhance switching speeds while maintaining wide RBSOA.
The BUL series BUL59 is designed for use in lighting applications and low cost switch-mode power supplies.