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BUL76B

Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.*Triple Guard Rings for improved co...

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SeekIC No. : 004304564 Detail

BUL76B: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...

BUL76B Data Sheet

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Part Number:
BUL76B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

*Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
*Triple Guard Rings for improved control of high voltages.


Specifications

VCBO Collector - Base Voltage(IE =0)
 250V
VCEO Collector -Emitter Voltage (IB = 0)
100V
VEBO Emitter - Base Voltage (IC = 0)
 10V
IC Continuous Collector Current 70A
IB Base Current 14A
Ptot Total Dissipation at Tcase= 25 85W
Tj Junction Temperature 150
Tstg Operating and Storage Temperature Range -55 to +150



Description

The BUL76B features are as follows:
*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING


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