BUL89

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 12 A
Package / Case : TO-220AB
Packaging : Tube
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V


Features:

*HIGHVOLTAGECAPABILITY
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*LOWBASE-DRIVEREQUIREMENTS VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125


Application

*ELECTRONICTRANSFORMERFOR HALOGENLAMPS
*SWITCHMODEPOWERSUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	850	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	12	A
ICM	Collector Peak Current (tP<5 ms)	25	A
IB	Base Current	6	A
IBM	Base Peak Current (tP<5 ms)	12	A
Ptot	Total Dissipation at Tc = 25	110	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance.It uses a Hollow Emitter structure to enhance switching speeds.

The BUL series BUL89 is designed for use in lighting applications and low costs witch-modepower supplies.