BULD25SL

Features:

*Designed Specifically for High Frequency Electronic Ballasts
*Integrated Fast t_rr Anti-parallel Diode, Enhancing Reliability
*Diode t_rr  Typically 500 ns
*New Ultra Low-Height SOIC Power Package
*Tightly Controlled Transistor Storage Times
*Voltage Matched Integrated Transistor and Diode
*Characteristics Optimised for Cool Running
*Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability
*Custom Switching Selections Available
*Surface Mount and Through-Hole Options

Pinout




Specifications

RATING		SYMBOL	VALUE	UNIT
Continuous collector current (see Note 1)		IC	2	A
Peak collector current (see Note 2)		ICM	4	A
Continuous base current (see Note 1)		IB	1.5	A
Peak base current (see Note 2)		IBM	2.5	A
ontinuous device dissipation at (or below) 25 ambient temperatue P tot	BULD25D BULD25SL	Ptot	see Figure 10 see Figure 11	W
Maximum average continuous diode forward current at (or below) 25 ambient temperatue		IE(av)	0.5	A
Operating junction temperature range		Tj	-65 to +150
Storage temperature range		Tstg	-65 to +150

Description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB's). This range o switching transistors has tightly controlled storage times and an integrated fast t_rr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor.

The integrated diode has minimal charge coupling with the transistorBULD25SL, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

BULD25SL is available in the now well established 8 pin low height surface mount D package, and the TO-220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for compact ballast applications.