BULT118D

Features: *NPNTRANSISTOR *INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE *HIGHVOLTAGECAPABILITY *LOWSPREADOFDYNAMICPARAMETERS *MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION *VERYHIGHSWITCHINGSPEEDApplication*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING *FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVER...

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BULT118D Picture
SeekIC No. : 004304581 Detail

BULT118D: Features: *NPNTRANSISTOR *INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE *HIGHVOLTAGECAPABILITY *LOWSPREADOFDYNAMICPARAMETERS *MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION *VERYHIGHSWITCHINGSPEEDAppl...

floor Price/Ceiling Price

Part Number:
BULT118D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/4/27

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Product Details

Description



Features:

*NPNTRANSISTOR
*INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED



Application

*ELECTRONICBALLASTSFOR
  FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE
  TRANSISTORLOWPOWERCONVERTERS



Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 700 V
VCEO Collector-Emitter Voltage (IB= 0)
400 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 2 A
ICM Collector Peak Current (tP<5 ms) 4 A
IB Base Current 1 A
IBM Base Peak Current (tP<5 ms) 2 A
Ptot Total Dissipation at Tc = 25 45 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

BULT118D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULT118D uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BULT118D is designed for use in lighting applications and low cost switch-modepower supplies.




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