BULT116D

Features:

*INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED


Application

*COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS
*FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	400	V
VCEO	Collector-Emitter Voltage (IB= 0)	200	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP<5 ms)	10	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	45	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULT116D is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
BULT116D uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
BULT116D is designed for use in lighting applications and low cost switch-mode power supplies.