Transistors Bipolar (BJT) RAIL PWR-MOS
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Maximum DC Collector Current : | 5 A | DC Collector/Base Gain hfe Min : | 10 |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-186A |
Packaging : | Rail |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector to emitter voltage | VBE=0V | - | 1000 | V |
VCEO | Collector to emitter voltage (open base) | - | 450 | V | |
VCBO | Collector to base voltage (open emitter) | - | 1000 | V | |
IC | Collector current (DC) | - | 5 | A | |
ICM | Collector current peak value | - | 10 | A | |
IB | Base current (DC) | - | 2 | A | |
IBM | Base current peak value | - | 4 | A | |
Ptot | Total power dissipation | Ths25 | - | 32 | W |
Tstg | Storage temperature | -65 | 150 | ||
Tj | Junction temperature | - | 150 |