BUT12

Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 850 V VCEO Collector-emitter voltage (open base) 400 V VEBO Emitter-base voltage(open collector) 5 V IC Collector current (DC) 8 A IB Bas...

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SeekIC No. : 004304650 Detail

BUT12: Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 850 V VCEO Collector-emitter voltage (open base) 400 V VEB...

floor Price/Ceiling Price

Part Number:
BUT12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V   850 V
VCEO Collector-emitter voltage (open base)     400 V
VEBO Emitter-base voltage(open collector)     5 V
IC Collector current (DC)     8 A
IB Base current (DC)     4 A
IBM Base current peak value     8 A
Ptot Total power dissipation Tmb 25   100 W
Tstg Storage temperature   -55 150
Tj Junction temperature     150



Description

Highvoltage,high-speed switching npn transistors BUT12 in a metal envelope ,primarily for use in switching power circuits.     


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