Transistors Bipolar (BJT) NPN Sil Transistor
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V | ||
| Maximum DC Collector Current : | 8 A | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Bulk |
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
|
VCBO |
Collector-base voltage | BUT12 | Open emitter |
850 |
V |
| BUT12A |
1000 | ||||
|
VCEO |
Collector-emitter voltage | BUT12 | Open base |
400 |
V |
| BUT12A |
450 | ||||
|
VEBO |
Emitter-base voltage | Open collector |
9 |
||
|
IC |
Collector Current |
8 |
A | ||
|
ICM |
Collector Current-Peak |
20 |
A | ||
|
IB |
Base current |
4 |
A | ||
|
IBM |
Base current-peak |
6 |
A | ||
|
Ptot |
Total Power Dissipation | Tmb25 |
100 |
W | |
|
Tj |
Junction Temperature |
150 |
|||
|
Tstg |
Storage Temperature Range |
-65~150 |
|||
| Technical/Catalog Information | BUT12A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 450V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 100W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.2A, 6A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUT12A BUT12A |