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Part Number: BUT12XI

 

 

 

 

Description: Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suite...


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BUT12XI General Description


Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.

BUT12XI Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V   1000 V
VCEO Collector-emitter voltage (open base)     450 V
VEBO Emitter-base voltage(open collector)     8 V
IC Collector current (DC)     20 A
IB Base current (DC)     4 A
IBM Base current peak value     6 A
Ptot Total power dissipation Tmb 25   33 W
Tstg Storage temperature   -65 150
Tj Junction temperature     150

BUT12XI Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury.  Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

BUT12XI Connection Diagram

BUT12XI  Connection Diagram

BUT12XI datasheet

BUT12XI
PDF/DataSheet Download

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