BUT90

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
Package / Case : TO-3
Collector- Emitter Voltage VCEO Max : 125 V
Maximum DC Collector Current : 50 A


Features:

*SGS-THOMSON PREFERRED SALESTYPE
*NPN TRANSISTOR 
*HIGH CURRENT CAPABILITY 
*FAST SWITCHING SPEED 
*HIGH RUGGEDNESS 
*LOW COLLECTOR EMITTER SATURATION


Application

*UNINTERRUPTABLE POWER SUPPLY 
*MOTOR CONTROL 
*LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 

Specifications

Symbol	Parameter	Value	Unit
VCEV	Collector-Emitter Voltage (VBE= -1.5V)	200	V
VCEO	Collector-Emitter Voltage (IB= 0)	125	V
VEBO	Emitter-Base Voltage (IC = 0)	10	V
IE	Emitter Current	50	A
IEM	Emitter Peak Current	120	A
IB	Base Current	12	A
IBM	Base Peak Current	32	A
Ptot	Total Power Dissipation at Tcase 25	250	W
Tstg	Storage Temperature	-65 to 200
Tj	Junction Temperature	200

Description

The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.