BUV298AV

Transistors Bipolar (BJT) NPN Power Module LTB 9-2009

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SeekIC No. : 00211315 Detail

BUV298AV: Transistors Bipolar (BJT) NPN Power Module LTB 9-2009

floor Price/Ceiling Price

Part Number:
BUV298AV
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 50 A
DC Collector/Base Gain hfe Min : 12 Mounting Style : Through Hole
Package / Case : ISOTOP Packaging : Tube    

Description

Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 450 V
Maximum DC Collector Current : 50 A
DC Collector/Base Gain hfe Min : 12
Package / Case : ISOTOP


Features:

*HIGH CURRENT POWER BIPOLAR MODULE
*VERY LOW Rth  JUNCTION CASE
*SPECIFIED ACCIDENTAL OVERLOAD AREAS
* ISOLATED CASE(2500VRMS)
*EASY TO MOUNT
* LOW INTERNAL PARASITIC INDUCTANCE



Application

*MOTORCONTROL
*SMPS&UPS
*WELDINGEQUIPMENT



Specifications

Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE=-1.5V) 1000 V
VCEO(sus) Collector-Emitter Voltage (IB=0) 450 V
VEBO Emitter-Base Voltage (IC=0) 7 V
IC

Collector Current

50 A
ICM Collector Peak Current (tp=10ms) 75 A
IB Base Current 10 A
IBM Base Peak Current (tp=10ms) 16 A
Ptot Total Dissipation at Tc=25 250 W
Tstg Storage Temperature -55 to 150
Tj

Max. Operating Junction Temperature

150
VISO

Insulation Withstand Voltage (AC-RMS)

2500



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