Transistors Bipolar (BJT) NPN Power Module LTB 9-2009
BUV298AV: Transistors Bipolar (BJT) NPN Power Module LTB 9-2009
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V | ||
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 50 A | ||
| DC Collector/Base Gain hfe Min : | 12 | Mounting Style : | Through Hole | ||
| Package / Case : | ISOTOP | Packaging : | Tube |
| Symbol | Parameter | Value | Unit |
| VCEV | Collector-Emitter Voltage (VBE=-1.5V) | 1000 | V |
| VCEO(sus) | Collector-Emitter Voltage (IB=0) | 450 | V |
| VEBO | Emitter-Base Voltage (IC=0) | 7 | V |
| IC |
Collector Current |
50 | A |
| ICM | Collector Peak Current (tp=10ms) | 75 | A |
| IB | Base Current | 10 | A |
| IBM | Base Peak Current (tp=10ms) | 16 | A |
| Ptot | Total Dissipation at Tc=25 | 250 | W |
| Tstg | Storage Temperature | -55 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 | |
| VISO |
Insulation Withstand Voltage (AC-RMS) |
2500 |