Transistors Bipolar (BJT) Hi Pwr NPN Silicon Transistor
BUV61: Transistors Bipolar (BJT) Hi Pwr NPN Silicon Transistor
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 200 V | ||
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 50 A | ||
| Configuration : | Single | Maximum Operating Temperature : | + 150 C | ||
| Mounting Style : | Through Hole | Package / Case : | TO-3 |
| Symbol | Parameter | Value | Unit |
| VCEV | Collector-Emitter Voltage (VBE=-1.5V) | 300 | V |
| VCEO | Collector-Emitter Voltage (IB=0) | 200 | V |
| VEBO | Emitter-Base Voltage (IC=0) | 7 | V |
| IC | Collector Current | 50 | A |
| ICM | Collector Peak Current | 75 | A |
| IB | Base Current | 8 | A |
| IBM | Base Peak Current | 15 | A |
| PBase | Reverse Bias Base Dissipation | 2 | W |
| Ptot | Total Dissipation at TC<25 | 250 | W |
| Tstg | Storage Temperature | -65 to +200 | |
| TJ | Max Operating Junction Temperature | 200 |