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Part Number: BUW14

 

 

 

 

Description: High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use i...


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BUW14 General Description


High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

BUW14 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 -

1000
V
VCEO Collector-emitter voltage (open base)   -
450 V
IC collector current (DC)   - 0.5 A
ICM collector current peak value   - 1 A
IB base current (DC) - 0.2 A
IBM base current (peak value) - 0.3 A
IBM Reverse base current peak value 1   - 0.3 A
Ptot total power dissipation Tmb 60 - 20 W
Tstg storage temperature -65 150
Tj junction temperature - 150
 

BUW14 datasheet

BUW14
PDF/DataSheet Download

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BUW14 Relative Products

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    The BUW133H features are as follows: ·High Switching Speed·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 450V

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