Purchase BUY49P, In-stock BUY49P From SeekIC.
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- Table of contents:
BUY49P
-
Suppliers
DataSheet
General Description
BUY49P Maximum Ratings
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
250 |
V |
|
VCEO |
Collector-Emitter Voltage |
200 |
V |
|
VEBO |
Emitter-Base Voltage |
6 |
V |
|
IC |
Collector Current-Continuous |
3.0 |
A |
|
ICM |
Collector Current-Peak |
5.0 |
A |
|
PC |
Collector Power Dissipation @TC=25 |
15 |
W |
|
TJ |
Junction Temperature |
150 |
|
|
Tstg |
Storage Temperature Range |
-65~150 |
BUY49P Features
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Current Capability
: VCEO(SUS) = 200V(Min)
·High Current Capability
BUY49P Typical Application
·Designed for high-current switching applications.
BUY11
PDF/DataSheet Download
- Datasheet: BUY11
- File Size: 11568 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·BUY18S
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
- 11562 KB
- ·BUY20
- SEME-LAB [Seme LAB]
- Bipolar NPN Device
- 11568 KB
- ·BUY24
- SEME-LAB [Seme LAB]
- SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR
- 22540 KB
- ·BUY29
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
- 11567 KB
- ·BUY47
- SEME-LAB [Seme LAB]
- HIGH VOLTAGE, HIGH CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR
- 20564 KB
- ·BUY48
- CENTRAL [Central Semiconductor Corp]
- Small Signal Transistors
- 20564 KB
- ·BUY49S
- CENTRAL [Central Semiconductor Corp]
- Small Signal Transistors
- 57409 KB
- ·BUY50
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
- 11575 KB
BUY49P Relative Products
BUY48
BUY47
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BUY11
The BUY11 is designed as one kind of bipolar NPN device in a hermetically sealed TO3 metal package. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. The ...
BUXD87
The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching spe eds and high voltage withstand capability.
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