MOSFET N-Ch 50 Volt 23 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 23 A | ||
| Resistance Drain-Source RDS (on) : | 0.06 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =26 |
ID | 23 | A |
| Pulsed drain current TC = 25 |
IDpuls | 92 | |
| Avalanche current,limited by Tjmax | IAR | 23 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
1.3 |
mJ |
|
Avalanche energy, single pulse |
EAS | 8 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 75 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Technical/Catalog Information | BUZ10 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 23A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 14A, 10v |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 75W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BUZ10 BUZ10 497 2728 5 ND 49727285ND 497-2728-5 |