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Part Number: BUZ100

 

 

 

 

 

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BUZ100 Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC = 23 °C
ID
60
A
Pulsed drain current
TC = 25 °C
IDpuls
240
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj= 25 °C
EAS

250
mJ
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt

6
kV/µs
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C
Ptot
250
W
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, chip case RthJC 0.6 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040   E  
IEC climatic category, DIN IEC 68-1   55 / 175 / 56

BUZ100 datasheet

BUZ100
PDF/DataSheet Download

  • Datasheet: BUZ100
  • File Size: 190453 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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