Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =35 ID 8 A Pulsed drain currentTC = 25 IDpuls 32 Avalanche current,limited by Tjmax IAR 8 Avalanche energy,periodic limited b...
BUZ331: Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =35 ID 8 A Pulsed drain currentTC = ...
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Parameter | Symbol | Values | Unit |
Continuous drain current TC =35 |
ID | 8 | A |
Pulsed drain current TC = 25 |
IDpuls | 32 | |
Avalanche current,limited by Tjmax | IAR | 8 | |
Avalanche energy,periodic limited by Tjmax |
EAR |
13 |
mJ |
Avalanche energy, single pulse |
EAS | 570 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 125 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |