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MFG:INF  D/C:05+  

BUZ332 Product Image

BUZ Series Datasheet download

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Part Number: BUZ332

 

MFG: INF

 

D/C: 05+

 

Urgent Purchase

BUZ332 Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC = 33
ID 8.5 A
Pulsed drain current
TC = 25
IDpuls 34
Avalanche current,limited by Tjmax IAR 8
Avalanche energy,periodic limited by Tjmax EAR 13 mJ
Avalanche energy, single pulse
ID =8 A, VDD = 50V, RGS = 25
L =16.3mH, Tj = 25
EAS 570
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25
Ptot 150 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 0.83 K/W
Thermal resistance, chip to ambient RthJA 75  
DIN humidity category, DIN 40 040   E  
IEC climatic category, DIN IEC 68-1   55 / 150 / 56  

BUZ332 Features

• N channel
• Enhancement mode
• Avalanche-rated

BUZ332 datasheet

BUZ332
PDF/DataSheet Download

  • Datasheet: BUZ332
  • File Size: 157954 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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