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Five Points

Parameter	Symbol	Values	Unit
Continuous drain current T=28	ID	22	A
Pulsed drain current T=25	Idpuls	18
Avalanche current,limited by Tjmax	Iar	22	MJ
Avalanche energy,periodic limited by Tjmax	Ear	12
Avalanche energy, single pulse	Eas
Id= 41 A, Vdd= 25 V, Rgs= 25
L = 249.9 H, Tj = 25 °C		450
Gate source voltage	Vgs	±20	V
Power dissipation T=25	Ptot	125	W
Operating temperature	Tj	55 ... + 150	C
Storage temperature	Tstg	55 ... + 150
Thermal resistance, chip case	RthJC	1	K/W
Thermal resistance, chip to ambient	RthJA	75
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56

* N channel
* Enhancement mode
* Avalanche-rated

BUZ10
PDF/DataSheet Download

·BUZ100
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
190453 KB
·BUZ100L
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
191198 KB
·BUZ100S
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
129031 KB
·BUZ100S-4
Infineon
SIPMOS ? Power Transistor
92674 KB
·BUZ100SL
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
126220 KB
·BUZ100SL-4
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
91749 KB
·BUZ101
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
189550 KB
·BUZ101L
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
189790 KB

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