C30902E

Features: • High Quantum Efficiency 77% Typical at 830 nm• C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second• Hermetic...

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SeekIC No. : 004308760 Detail

C30902E: Features: • High Quantum Efficiency 77% Typical at 830 nm• C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability ...

floor Price/Ceiling Price

Part Number:
C30902E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• High Quantum Efficiency 77% Typical at 830 nm
• C30902S and C30921S in Geiger Mode:
  Single-Photon Detection Probability to 50%
  Low Dark-Count Rate at 5% Detection Probability - Typically
  15,000/second at +22°C
  350/second at -25°C
  Count Rates to 2 x 106/second
• Hermetically Sealed Package
• Low Noise at Room Temperature
  C30902E, C30921E - 2.3 x 10-13 A/Hz1/2
  C30902S, C30921S - 1.1 x 10-13 A/Hz1/2
• High Responsivity - Internal Avalanche Gains in Excess of 150
• Spectral Response Range - (10% Points) 400 to 1000 nm
• Time Response - Typically 0.5 ns
•Wide Operating Temperature Range - -40°C to +70°C



Specifications

Reverse Current at 22°C:
  Average value, continuous operation .......................................  200 A
  Peak value (for 1 second duration, non-repetitive) ..................  1 mA
Forward Current, IF at 22°C:
  Average value, continuous operation ......................................  5 mA
  Peak value (for 1 second duration, non-repetitive) .................  50 mA
  Maximum Total Power Dissipation at 22°C .............................  60 mW
Ambient Temperature:
  Storage, Tstg ...........................................................................  -60 to +100°C
  Operating, TA  .........................................................................  -40 to +70°C
  Soldering (for 5 seconds) ........................................................  200°C



Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail", the responsivity of C30902E is independent of modulation frequency up to about 800 MHz. The detector chip C30902E is hermetically-sealed behind a flat glass window in a modified TO- 18 package. The useful diameter of the photosensitive surface is 0.5 mm.

PerkinElmer Type C30921E utilizes the same silicon detector chip as the C30902E, but in a package containing a lightpipe which allows efficient coupling of light to the detector from either a focussed spot or an optical fiber up to 0.25 mm in diameter. The internal end of the lightpipe is close enough to the detector surface to allow all of the illumination exiting the lightpipe to fall within the active-area of the detector. The hermetically-sealed TO-18 package allows fibers to be epoxied to the end of the lightpipe to minimize signal losses without fear of endangering detector stability.

The C30902E and C309021E are designed for a wide variety of uses including optical communications at data rates to 1 GBit/second, laser range-finding, and any other applications requiring high speed and/or high responsivity.


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