C30927E-01

DescriptionQuadrant silicon photodiodes C30927E-01 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p + surface opposite the junction. Features: High Quantu...

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SeekIC No. : 004308770 Detail

C30927E-01: DescriptionQuadrant silicon photodiodes C30927E-01 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants ...

floor Price/Ceiling Price

Part Number:
C30927E-01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Description



Description

Quadrant silicon photodiodes C30927E-01 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p + surface opposite the junction. Features: High Quantum Efficiency Fast Rise Times Hermetically-Sealed Low-Profile TO-8 Package


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