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C30954EH

DescriptionGeneral purpose silicon avalanche photodiode C30954EH made using a double-diffused reach-through structure. C30954EH photodiode is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficien...

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C30954EH: DescriptionGeneral purpose silicon avalanche photodiode C30954EH made using a double-diffused reach-through structure. C30954EH photodiode is designed such that it's long wave response (>900 nm...

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C30954EH
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Description

General purpose silicon avalanche photodiode C30954EH made using a double-diffused "reach-through" structure. C30954EH photodiode is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40% at 1060 nm. C30954EH Key applications include: Range-finding, LIDAR, and YAG laser detection. Features: High quantum efficiency at 1060 nm Fast response time Wide operating temperature range Low capacitance Hermetically Sealed Packages RoHS-compliant Click here to view the Datasheet Long Wavelength Enhanced Silicon APD


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