DescriptionGeneral purpose silicon avalanche photodiode C30955E made using a double-diffused reach-through structure. This photodiode C30955E is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. C30955E Features: Enhanced Re...
C30955E: DescriptionGeneral purpose silicon avalanche photodiode C30955E made using a double-diffused reach-through structure. This photodiode C30955E is designed such that it's long wave response (>900...
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DescriptionQuadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' ...