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C30956EH

DescriptionGeneral purpose silicon avalanche photodiode C30956EH made using a double-diffused reach-through structure. This photodiode C30956EH is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. Features: High quantum effi...

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C30956EH: DescriptionGeneral purpose silicon avalanche photodiode C30956EH made using a double-diffused reach-through structure. This photodiode C30956EH is designed such that it's long wave response (>9...

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Part Number:
C30956EH
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5000

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Description

General purpose silicon avalanche photodiode C30956EH made using a double-diffused "reach-through" structure. This photodiode C30956EH is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. Features: High quantum efficiency at 1060 nm Fast response time Wide operating temperature range Low capacitance Hermetically Sealed Packages RoHS-compliant Click here to view the Datasheet Long Wavelength Enhanced Silicon APD


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