DescriptionMulti-Element silicon avalanche photodiode made using a double-diffused ''reach-through'' structure. C30985E structure provides high responsivity up to 1060 nm as well as fast rise and fall times at all wavelengths. Features: High Quantum Efficiency Fast Rise Times Hermetically-Sealed L...
C30985E: DescriptionMulti-Element silicon avalanche photodiode made using a double-diffused ''reach-through'' structure. C30985E structure provides high responsivity up to 1060 nm as well as fast rise and fa...
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DescriptionQuadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' ...