CA5470

The CA5470 is an operational amplifier that combines the advantages of both high speed CMOS and bipolar transistors on a single monolithic chip. It is constructed in the BiMOS-E process which adds drain-extension implants to 3m polygate CMOS, enhancing both the voltage capability and providing vertical bipolar transistors for broadband analog/digital functions. This process lends itself easily to high speed operational amplifiers, comparators, analog switches and interface peripherals, resulting in twice the speed of the conventional CMOS transistors having similar feature size.

BiMOS-E are broadbased bipolar transistors that have high transconductance, gains more constant with current level, stable "precision" base-emitter offset voltages and superior drive capability. Excellent interface with environmental potentials enable use in 5V logic systems and future 3.3V logic systems. Refer to Application Note AN8811.

ESD capability exceeds the standard 2000V level. The CA5470 series can operate with single supply voltages from 3V to 16V or ±1.5V to ±8V. They have guaranteed specifications at both 5V and ±7.5V at room temperature as well as over the full -55 to 125 military range.